The study of stacked Zinc Tin Oxide Thin Film Transistors and their Photoelectrical Applications
碩士 === 國立彰化師範大學 === 光電科技研究所 === 106 === In this study, Zinc Tin oxide was prepared by sol-gel method to constitute a thin film transistor, and the electrical properties were investigated by different concentrations of zinc tin oxide. Among them, 0.4M zinc tin oxide ratio was the best, and the best p...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/a9byvm |