The Growth of Gallium Nitride on SiC Substrates by Plasma Assisted Molecular Beam Epitaxy
博士 === 國立東華大學 === 材料科學與工程學系 === 106 === Gallium nitride (GaN) compound semiconductors have been commercially developed as a material of great interest for applications in optoelectronic and electronic devices due to their excellent properties. However, the lattice mismatch and incompatibility of the...
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| Format: | Others |
| Language: | en_US |
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2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/vsf54h |