Analysis of GaN Grown on MoS2 Substrate Prepared with Plasma-Assisted Molecular Beam Epitaxy
碩士 === 國立東華大學 === 材料科學與工程學系 === 106 === In this study, we used pulsed laser deposition (PLD) to grow large area and high quality two dimension material MoS2, and then deposited GaN films on this substrate by plasma-assisted molecular beam epitaxy (PAMBE). We investigate the growth mechanism, surfacr...
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/4tt7g9 |