Thickness dependence on the resistive switching properties of NiO/HfO2 thin films
碩士 === 國立東華大學 === 物理學系 === 106 === In this study, we prepared a sandwich resistive-switching device of NiO/HfO2@SiO2/Si. The first layers of HfO2 thin films was synthesized by hot-filament metal-oxide vapor deposition (HFMOVD) technique with various synthesis temperatures, which were 1600, 1650, 170...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/35pxsh |