Growth and characterization of M-plane III-nitride thin films heterostructure by plasma-assisted molecular beam epitaxy
博士 === 國立中山大學 === 物理學系研究所 === 106 === In this thesis, several series of M-plane (In)GaN were grown by plasma assisted molecular beam epitaxy. We have grown several GaN samples on sapphire(0001) substrates with a sputtered AlN buffer to investigate the orientation mechanism of GaN. The sputtered AlN...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/9h9hky |