Growth and characterization of M-plane III-nitride thin films heterostructure by plasma-assisted molecular beam epitaxy
博士 === 國立中山大學 === 物理學系研究所 === 106 === In this thesis, several series of M-plane (In)GaN were grown by plasma assisted molecular beam epitaxy. We have grown several GaN samples on sapphire(0001) substrates with a sputtered AlN buffer to investigate the orientation mechanism of GaN. The sputtered AlN...
Main Authors: | Yu-Chiao Lin, 林雨樵 |
---|---|
Other Authors: | Ikai Lo |
Format: | Others |
Language: | en_US |
Published: |
2018
|
Online Access: | http://ndltd.ncl.edu.tw/handle/9h9hky |
Similar Items
-
Group III-Nitride Epitaxial Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
by: Roul, Basanta Kumar
Published: (2016) -
Semipolar And Nonpolar Group III-Nitride Heterostructures By Plasma-Assisted Molecular Beam Epitaxy
by: Rajpalke, Mohana K
Published: (2015) -
Growth and characterization of Mn doped nonpolar m-plane III-nitrides film by plasma-assisted molecular beam epitaxy
by: Song-sain Guo, et al.
Published: (2017) -
Epitaxial Nonpolar III-Nitrides by Plasma-Assisted Molecular Beam Epitaxy
by: Mukundan, Shruti
Published: (2018) -
III-nitride Semiconductors Grown By Plasma Assisted Molecular Beam Epitaxy
by: He, Lei
Published: (2004)