The Electronic Structures of Few-Layered InSe Studied by Scanning Tunneling Microscopy/Spectroscopy
碩士 === 國立中山大學 === 物理學系研究所 === 106 === Direct-to-indirect band gap transition of few-layers InSe is a problem for optical measurements like Raman spectroscopy and photoluminescence spectroscopy (PL). To identify the properties of few layers InSe, we use scanning tunneling microscopy (STM) and scannin...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3527tn |