Suppression of Carrier Recombination Effect on the Polycrystalline-Silicon Tunnel Thin-Film Transistor with Gate-Drain Underlapping by the NH3 Plasma Passivation Method
碩士 === 國立中山大學 === 電機工程學系研究所 === 106 === In this thesis, we have used the mask to design different gate, source, and drain positions, and successfully fabricated polycrystalline-silicon tunnel thin-film transistors with different gate-drain lapping length. Especially that polycrystalline-silicon tunn...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/372k4v |