Study of GaN UV pin Photodiodes and HEMTs
碩士 === 國立清華大學 === 光電工程研究所 === 106 === This experiment can be divided into two major parts, The first part is the development of GaN materials used in photodetectors,The second part is the application of gallium nitride materials in the development of high electron mobility transistors. In the photod...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/kd479f |