The study of traps in gate oxide layer of the FinFETs by using Random Telegraph Noise

碩士 === 國立清華大學 === 電子工程研究所 === 106 === abstract hide

Bibliographic Details
Main Authors: Kuo, Ping-Han, 郭秉翰
Other Authors: Lien, Chen-Hsin
Format: Others
Language:zh-TW
Published: 2017
Online Access:http://ndltd.ncl.edu.tw/handle/ue92e9