The Simulation and Improvement of Parasitic Components of the FinFETs
碩士 === 國立清華大學 === 電子工程研究所 === 106 === Since dimensions of device channel shrink, several Short Channel Effects (SCEs) appear. The FinFET which provides excellent gate control over short channel effects is considered one of the major solutions. However, the three-dimension device provides a lot of pa...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/txa842 |