Enhanced Carrier Mobility and Electrical Properties in FinFETs with SiGe Buried Channel and Plasma Treatments
碩士 === 國立清華大學 === 工程與系統科學系 === 106 === The carrier mobility of MOSFET with nano-scale is reduced by replacing SiO2 with high-k gate dielectric. Channel material selection and interfacial layer quality are crucial to enhance carrier mobility. In this thesis, SiGe is used as channel material, carrier...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6c58n3 |