Ferroelectric HfZrOx Characteristics and Memory Applications
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 106 === In recent years, ferroelectric material has been extensively investigated. Hf-based oxide materials with ferroelectricity have the potential for application on FeRAM. Therefore, it is considered as one of the non-volatile memory candidates of emerging technolo...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/ukc99g |