Future Generation Electronics: Ferroelectric Gate SiGe FETs、GaN-based MOS-HEMT、Two-Dimensional Materials
碩士 === 國立臺灣師範大學 === 光電科技研究所 === 106 === The internet of things (IoT) and wearable applications become more popular in recent years. Therefore, it has became become necessary to develop small sized, high performance devices, and low power consumption. This theory will be divided into two-dimensional...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/w3pbez |