Optimization of Various Field Plate Design in Enhancing the Maximum Breakdown Voltage of GaN heterojunction Field Effect Transistor
碩士 === 國立臺灣大學 === 光電工程學研究所 === 106 === It is well known that gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are good high-power semiconductor devices because they have high breakdown voltage, high mobility, and large amount of 2DEG due to the polarization field. To operate HEMTs in...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8ktx5y |