Band Structure Simulation and Photoluminescence of GeSn Alloys
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === Recently, GeSn alloys have attracted more and more attentions because they can become direct bandgap materials with Sn fraction of > 8~11 % for high-efficiency optoelectronic devices. In addition, due to their high electron and hole mobility, GeSn can be use...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/845xn3 |