Effects of surface tunneling in Si/SiGe and Ge/GeSi heterostructures
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === Recently, two-dimensional electron and hole gases (2DEGs/2DHGs) in Si/SiGe heterostructures and Ge/GeSi heterostructures have gained lots of interests for the potential quantum device applications. Undoped structures, which are free of gate leakage and charge i...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/dbsey3 |