Fabrication and Electrical Properties of Vertical InAs Nanowire FETs on Si (111) Substrates
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === In this thesis, we have fabricated the vertical InAs nanowire (NW) field-effect transistors (FETs) and discussed the electrical properties. The InAs nanowires are grown along the [111] direction via molecular beam epitaxy (MBE) on a heavily doped Si(111) substr...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/gzuz88 |