Electrical properties of MBE-Y2O3/In0.1Ga0.9As MOS capacitors and GaAs-based inversion-channel MOSFETs
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === Si-based metal oxide semiconductor field-effect -transistors (MOSFETs) have undergone extreme scaling in the past few decades fulfilling Moore''s law. As the production for 7 nm node complementary MOS (CMOS) is around the corner, diverse solut...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/467hmc |