Electrical properties of MBE-Y2O3/In0.1Ga0.9As MOS capacitors and GaAs-based inversion-channel MOSFETs

碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === Si-based metal oxide semiconductor field-effect -transistors (MOSFETs) have undergone extreme scaling in the past few decades fulfilling Moore''s law. As the production for 7 nm node complementary MOS (CMOS) is around the corner, diverse solut...

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Bibliographic Details
Main Authors: Jun-Hao Huang, 黃俊豪
Other Authors: Minghwei Hong
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/467hmc

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