GeSn-based photodiode with high performance operated from 1350 to 1700 nm
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === In recent years, many researchers study GeSn photodiodes that were applied optical communication and focal plane array infrared imaging system. The incorporation of Sn into Ge can adjust bandgap structure of Ge. When Sn content increases over specific amount, G...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/w63tqs |