Development and Investigation of the Dual-gate Black Phosphorus Field-Effect Transistor
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === In this paper, we propose a method to solve the interface problem that occurs in the channel and dielectric layer when making black phosphorus field-effect transistor. The main reason for the interface problem is that the black phosphorus lacks of dangling bond...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/uxj696 |