Development and Investigation of the Dual-gate Black Phosphorus Field-Effect Transistor
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === In this paper, we propose a method to solve the interface problem that occurs in the channel and dielectric layer when making black phosphorus field-effect transistor. The main reason for the interface problem is that the black phosphorus lacks of dangling bond...
Main Authors: | Kai-Lin Fan, 范鎧麟 |
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Other Authors: | Chao-Hsin Wu |
Format: | Others |
Language: | en_US |
Published: |
2018
|
Online Access: | http://ndltd.ncl.edu.tw/handle/uxj696 |
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