Investigation of the InGaAs Fin Structure High Electron Mobility Transistors and Negative Capacitance Material
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === Starting with Moore''s law, we quickly review the development of semiconductors in the past 50 years, and understand the problems encountered by predecessors at each technology node along with the methods to overcome them. Also, we briefly des...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/j699c8 |