Characterization and Memory Application of Ultrathin Oxide MOS Diodes in the Perspective of Capacitance
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === The thesis studies the fringing field carrier coupling effect in the view point of capacitance characteristics. A two capacitance states operation is proposed and demonstrated to have memory behavior. It is known that the carriers of adjacent devices would int...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/nfx93v |