Design of the Broadband LNA and Ka-band PA
碩士 === 國立臺灣大學 === 電信工程學研究所 === 106 === An ultra-wideband low noise amplifier (LNA) in 0.1-μm GaAs pHEMT process is presented. The proposed LNA is designed with the feedback structure to compensate the high-frequency gain, and improve the gain flatness. With only two stages, the 3-dB bandwidth of the...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/mw8c4p |