Ferroelectricity-Based Transistors for Steep Subthreshold Swing Application
博士 === 國立臺灣大學 === 機械工程學研究所 === 106 === The internet of things (IoT) and wearable applications become more popular in recent years, therefore, it has become necessary to develop small sized, high performance devices, with low power consumption. In GaN based MOS-HEMTs, the subthreshold swing (from 4V/...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/h3s5kv |