Analysis on Pad Performance for Chemical Mechanical Polishing/Planarization of Shallow Trench Isolation
碩士 === 國立臺灣科技大學 === 機械工程系 === 106 === Chemical mechanical planarization/polishing (CMP) has been widely adopted in the integrated circuit (IC) fabrication. Due to demand of IC downsizing to nanoscale, CMP process stability and reproducibility continue to face stringent challenges. Polishing pad surf...
Main Authors: | Shih-Yao Wang, 王詩堯 |
---|---|
Other Authors: | Chao-Chang A. Chen |
Format: | Others |
Language: | zh-TW |
Published: |
2018
|
Online Access: | http://ndltd.ncl.edu.tw/handle/6x27u4 |
Similar Items
-
Modeling of chemical mechanical polishing for shallow trench isolation
by: Gan, Terence (Terence Chihkiong), 1975-
Published: (2014) -
Modeling of chemical mechanical polishing for shallow trench isolation
by: Lee, Brian, 1975-
Published: (2006) -
Chemical Mechanical Polishing: Pad Profile Planarization
by: Cheng-Yu Chen, et al.
Published: (2000) -
An investigation of the effects of fixed abrasive chemical mechanical polishing to shallow trench isolation process
by: Chin-chung Wei, et al.
Published: (2007) -
Application of Multivariable Run-to-run Control for Shallow Trench Isolation Process of Chemical Mechanical Polishing
by: Tzu How Cheng, et al.
Published: (2008)