The Impact of Various Active Surface Area(SA) and Fin Number on Device Performance and Reliability of Tri-Gate FinFET
碩士 === 國立高雄大學 === 電機工程學系碩博士班 === 106 === To enhance electrical characteristics and reliability, material and structure of device are continuously innovate---Traditional planar MOSFET is replaced by 3D FinFET due to its performance and as well as the capability of scaling. In this work, Tri-Gate FinF...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/az6788 |