A Study of ESD-Reliability Strengthening by Layout Structure Modulations in HV 32V/60V pLDMOS Devices

碩士 === 國立聯合大學 === 電子工程學系碩士班 === 106 === With the semiconductor process continuously shrinking, in other words, the number of transistors that can be accommodated in an integrated circuit increases within the same area. But, it will also causes more and more serious reliability problems. Electrosta...

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Bibliographic Details
Main Authors: CHIU, YI-HAO, 邱逸豪
Other Authors: CHEN, HUNG-WEI
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/2k5fk4