The Effects of IV Si Element on the Non-vacuum I-III-VI Cu(InGa)Se2 Compound Thin Films

碩士 === 國立虎尾科技大學 === 材料科學與工程系材料科學與綠色能源工程碩士班 === 106 === The experiment used non-vacuum processes to prepare Si doped Cu(InGa)Se2 thin films as the absorber layers for the photovoltaic devices. Experiment process is the first, according to different proportions of copper-selenium, indium-selenium and...

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Bibliographic Details
Main Authors: LIN, HONG-RU, 林宏儒
Other Authors: YANG, LI-JHONG
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/z5x7x5