The Investigation of The GaN Metal-Semiconductor-Metal Near UV Photodetector with Trench Structure
碩士 === 南臺科技大學 === 電子工程系 === 106 === In this study, the normal metal-semiconductor-metal (MSM) GaN photodetector, named PD1, was fabricated, and its characteristics of I-V, response, and low frequency noise were also measured. Then, two types of MSM photodetectors with trench structures were fabricat...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/mvauav |