Study on Mechanical Chemical Grinding of Single Crystal Silicon Carbide

碩士 === 淡江大學 === 機械與機電工程學系碩士班 === 106 === Silicon carbide (SiC) is attracting more and more attention and has great potential to become the next-generation semiconductor material for its wide bandgap, high electric breakdown field, high thermal conductivity, high chemical stability and low intrinsic...

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Bibliographic Details
Main Authors: Tsu-Chien Liu, 劉子謙
Other Authors: 趙崇禮
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/z7877b