Study on Mechanical Chemical Grinding of Single Crystal Silicon Carbide
碩士 === 淡江大學 === 機械與機電工程學系碩士班 === 106 === Silicon carbide (SiC) is attracting more and more attention and has great potential to become the next-generation semiconductor material for its wide bandgap, high electric breakdown field, high thermal conductivity, high chemical stability and low intrinsic...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/z7877b |
| Summary: | 碩士 === 淡江大學 === 機械與機電工程學系碩士班 === 106 === Silicon carbide (SiC) is attracting more and more attention and has great potential to become the next-generation semiconductor material for its wide bandgap, high electric breakdown field, high thermal conductivity, high chemical stability and low intrinsic carrier concentration. These superior physical properties make SiC a better choice for high-voltage power electronics application than silicon. However, SiC is extremely hard and brittle and is very difficult to machine. Poor surface finish and deep penetrated cracks are the typical damage induced by machining. This research aims to improve material removal efficiency and surface finish by machining SiC with mechanical chemical grinding (MCG). Resin bond grinding wheels with different percentage of diamond and CeO2 are designed, produced and tested in this study to grind single crystal 4H-SiC. Surface finish better than 5 nm (Ra) with an average material removal rate around 1648 μm3/min are achieved in this study. The typical grinding ratio is around 7.78.
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