A Study of Indium Doped Zinc Oxide Resistive Random Access Memories Fabricated by Sol-Gel Process
碩士 === 國立雲林科技大學 === 電子工程系 === 106 === In this study, a solution-processed IZO is developed for being a resistive switching material of an RRAM device. The research is divided into three parts. First, InO and ZnO RRAMs are studied. Second, based on the performances of InO and ZnO RRAMs, IZO RRAMs pre...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ex49n8 |