A Study of Indium Doped Zinc Oxide Resistive Random Access Memories Fabricated by Sol-Gel Process

• Main Authors: CHEN, YU-HAN, 陳禹翰
• Other Authors: HSU, CHIH-CHIEH
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/ex49n8

碩士 === 國立雲林科技大學 === 電子工程系 === 106 === In this study, a solution-processed IZO is developed for being a resistive switching material of an RRAM device. The research is divided into three parts. First, InO and ZnO RRAMs are studied. Second, based on the performances of InO and ZnO RRAMs, IZO RRAMs prepared with different IZO concentrations are studied. Then, based on the optimal IZO concentration, effects of InO/ZnO ratio on the RRAM performance are investigated. After that, based on the optimal indium oxide/zinc oxide ratio, effects of different top electrode and doping materials are researched. Instead of using high vacuum instruments, a low-cost, fast and simple process is applied in this research. The resistive switching characteristics are bipolar resistive switching and the memory window is 102. Endurance characteristic for more than 500 switching cycles can be obtained. The IZO RRAM structures are examined by the scanning electron microscope(SEM). The crystallinities and components of the IZO films are investigated by using X-ray diffraction analysis(XRD) and X-ray photoelectron spectroscopy(XPS). The physical mechanism of the resistive switching behavior of the IZO RRAMs is studied. Keywords：resistive random access memory (RRAM), oxide semiconductor, indium doped zinc oxide, sol-gel, bipolar resistive switching