Improving of the breakdown voltage of double-channel AlGaN/GaN HEMT with double gate and gate field plate
碩士 === 國立雲林科技大學 === 電子工程系 === 106 === AlGaN/GaN high electron mobility transistor have high breakdown voltages and are mostly used in high frequency. The first part of this paper is to optimize the component breakdown voltage, the initial structure is a single-gate dual-channel component with a brea...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/9g8m6q |