Improving Breakdown Voltage for AlGaN/GaN HEMTs with Combined Slant Field-Plate and Conventional Field-Plate
碩士 === 國立雲林科技大學 === 電子工程系 === 106 === ABSTRACT Gallium nitride high-electron-mobility transistor are ideally suitable to high power, high frequency, and high temperature circuit applications due to the excellent material propertyies of gallium nitride (GaN) such as high electron mobility, high break...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/jf9jh6 |