Preparation of Chemical Mechanical Polishing Slurry for Through Silicon Via

• Main Authors: Chuang-Sheng Chiu, 邱創勝
• Other Authors: Chien-Te Hsieh
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/xdcydw

碩士 === 元智大學 === 化學工程與材料科學學系 === 106 === In the Through-Silicon Via required chemical polishing slurry, this work uses potassium hydroxide, abrasive particles and ethylenediamine concentrations adjusting to planarizating and quality. This study focuses on the use of potassium hydroxide and ethylenediamine interaction beween the chemical etching of the slurry dosage. The experiment is divided into three major parts: the first part discusses and copper wafer static etching rate sues potassium hydroxide and ammonium hydroxide to compare and each other to get the best saturation curre, imputing the best concentration. The second part uses different concentrations of abrasive particles and potassium hydroxide added to the slurry. We select the best pH interval from chemical mechanical polishing, thus finding out the best remove rate to slurry formula design. The third part clarifies the best potassium hydroxide concentration of 2%, fixed potassium hydroxide 2% and different ethylenediamine concentrations range. Accordingly the static etching experiment obtained gets leads to an optimal slurry formula and experimental design using chemical mechanical polishing to silicon and copper wafers polishing get an optimal remove rate. Keywords: Through-Silicon Via, TSV, Static etch rate, SER, Chemical mechanical polishing, CMP, Remove rate, R.R.