GaN Metal-Insulator-Semiconductor Ultraviolet Photodetectors with a Gadolinium Fluoride Insulator
碩士 === 正修科技大學 === 電子工程研究所 === 107 === In recent years, ultraviolet detectors are widely reported due to the fact that gallium nitride (GaN) metal-semiconductor-metal (MSM) ultra-violet (UV) photodetectors (PDs) can operate with high performance because of the high-energy barrier junction which mainl...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ur2x84 |