Effects of Different Metal Gate Stack Materials on Ferroelectric Negative Capacitance HfZrO Film of Junctionless Field Effect Transistor (JL-FET)
碩士 === 逢甲大學 === 電子工程學系 === 107 === This thesis studies the effects of different metal gate (stack) materials on ferroelectric negative capacitance HfZrO2 film of junctionless field effect transistor (JL-FET). This thesis is divided into two items. The first item is to study the experimental results...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/s3zng3 |