Characteristics of Different Gate Spacers on Negative Capacitance HfZrO Film for Junctionless FET Application
碩士 === 逢甲大學 === 電子工程學系 === 107 === This work investigates the characteristics of different gate spacers on negative capacitance of ferroelectric HfZrO2 film of junctionless FET (JL-FET). This thesis is divided into two parts, the first part is to study the characteristics of ferroelectric HfZrO2 fil...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/d8crxj |