Characteristics of Stacked HfON and HfZrO2 Ferroelectric Films and Its Application on Junctionless FET
碩士 === 逢甲大學 === 電子工程學系 === 107 === This thesis mainly studies the characteristics of HfZrO2 film and stacked HfON/HfZrO2 film in metal/ferroelectric film/interfacial layer (IL)/Si substrate (MFIS) capacitance structure and its application on the nanowire junctionless field effect transistor. Firstly...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/3zurhf |