Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI)
碩士 === 義守大學 === 電子工程學系 === 107 === In this study, liquid phase oxidation (LPO) method was used for InGaP/InGaAs metal-oxide-semiconductor high-electron-mobility-transistor (MOSHEMT) and GaAs on insulator (GOI) process. For DC characteristics, the maximum drain saturation current (ID,max) is 288 mA/m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/wu934w |