Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI)

• Main Authors: Ching-Yi Kao, 高慶伊
• Other Authors: Kuan-Wei Lee
• Format: Others
• Language: en_US
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/wu934w

碩士 === 義守大學 === 電子工程學系 === 107 === In this study, liquid phase oxidation (LPO) method was used for InGaP/InGaAs metal-oxide-semiconductor high-electron-mobility-transistor (MOSHEMT) and GaAs on insulator (GOI) process. For DC characteristics, the maximum drain saturation current (ID,max) is 288 mA/mm. The maximum transconductance (gm,max) is 177 mS/mm, and the subthreshold swing (SS) is 99 mV/dec and 110 mV/dec, respectively. Two terminal breakdown for reverse voltage is -12.5 V. High frequency and low flicker noise also measurement. For fT and fmax are 9.9 GHz and 18.5 GHz, respectively. Low flicker noise is about 10-15 V2/Hz. In addition, In order to investigate the characteristics of components at different temperatures, the experiment also adds different temperature measurement (250 K to 350 K) to discuss the effect of devices on different temperatures. The fT and fmax are 8 GHz and 21 GHz at 250 K and 6 GHz and 16 GHz at 350 K, respectively. The results all high than HEMT with GOI indicated that MOSHEMT structure not only improve the gate leakage current and turn-on voltage but also improve the high frequency and low flicker noise by LPO process. Finally, it was found MOSHEMT with GOI applied in comparison to HEMT with GOI by LPO process, whether under electrical properties or thermal effect, all show promising for high speed and low noise application.