Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI)
碩士 === 義守大學 === 電子工程學系 === 107 === In this study, liquid phase oxidation (LPO) method was used for InGaP/InGaAs metal-oxide-semiconductor high-electron-mobility-transistor (MOSHEMT) and GaAs on insulator (GOI) process. For DC characteristics, the maximum drain saturation current (ID,max) is 288 mA/m...
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ndltd-TW-107ISU054280162019-09-26T03:28:23Z http://ndltd.ncl.edu.tw/handle/wu934w Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI) 具備絕緣體上砷化鎵結構磷化銦鎵金氧半高電子遷移率電晶體之溫度效應 Ching-Yi Kao 高慶伊 碩士 義守大學 電子工程學系 107 In this study, liquid phase oxidation (LPO) method was used for InGaP/InGaAs metal-oxide-semiconductor high-electron-mobility-transistor (MOSHEMT) and GaAs on insulator (GOI) process. For DC characteristics, the maximum drain saturation current (ID,max) is 288 mA/mm. The maximum transconductance (gm,max) is 177 mS/mm, and the subthreshold swing (SS) is 99 mV/dec and 110 mV/dec, respectively. Two terminal breakdown for reverse voltage is -12.5 V. High frequency and low flicker noise also measurement. For fT and fmax are 9.9 GHz and 18.5 GHz, respectively. Low flicker noise is about 10-15 V2/Hz. In addition, In order to investigate the characteristics of components at different temperatures, the experiment also adds different temperature measurement (250 K to 350 K) to discuss the effect of devices on different temperatures. The fT and fmax are 8 GHz and 21 GHz at 250 K and 6 GHz and 16 GHz at 350 K, respectively. The results all high than HEMT with GOI indicated that MOSHEMT structure not only improve the gate leakage current and turn-on voltage but also improve the high frequency and low flicker noise by LPO process. Finally, it was found MOSHEMT with GOI applied in comparison to HEMT with GOI by LPO process, whether under electrical properties or thermal effect, all show promising for high speed and low noise application. Kuan-Wei Lee 李冠慰 2019 學位論文 ; thesis 84 en_US |
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碩士 === 義守大學 === 電子工程學系 === 107 === In this study, liquid phase oxidation (LPO) method was used for InGaP/InGaAs metal-oxide-semiconductor high-electron-mobility-transistor (MOSHEMT) and GaAs on insulator (GOI) process.
For DC characteristics, the maximum drain saturation current (ID,max) is 288 mA/mm. The maximum transconductance (gm,max) is 177 mS/mm, and the subthreshold swing (SS) is 99 mV/dec and 110 mV/dec, respectively. Two terminal breakdown for reverse voltage is -12.5 V. High frequency and low flicker noise also measurement. For fT and fmax are 9.9 GHz and 18.5 GHz, respectively. Low flicker noise is about 10-15 V2/Hz. In addition, In order to investigate the characteristics of components at different temperatures, the experiment also adds different temperature measurement (250 K to 350 K) to discuss the effect of devices on different temperatures. The fT and fmax are 8 GHz and 21 GHz at 250 K and 6 GHz and 16 GHz at 350 K, respectively. The results all high than HEMT with GOI indicated that MOSHEMT structure not only improve the gate leakage current and turn-on voltage but also improve the high frequency and low flicker noise by LPO process.
Finally, it was found MOSHEMT with GOI applied in comparison to HEMT with GOI by LPO process, whether under electrical properties or thermal effect, all show promising for high speed and low noise application.
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author2 |
Kuan-Wei Lee |
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Kuan-Wei Lee Ching-Yi Kao 高慶伊 |
author |
Ching-Yi Kao 高慶伊 |
spellingShingle |
Ching-Yi Kao 高慶伊 Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI) |
author_sort |
Ching-Yi Kao |
title |
Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI) |
title_short |
Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI) |
title_full |
Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI) |
title_fullStr |
Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI) |
title_full_unstemmed |
Thermal Effect of InGaP Metal-Oxide-Semiconductor High-Electron-Mobility-Transistor with GaAs on Insulator (GOI) |
title_sort |
thermal effect of ingap metal-oxide-semiconductor high-electron-mobility-transistor with gaas on insulator (goi) |
publishDate |
2019 |
url |
http://ndltd.ncl.edu.tw/handle/wu934w |
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