Study of diffusion barrier and adhesion of electroless-deposited copper film on silanized silicon
碩士 === 國立中興大學 === 化學工程學系所 === 107 === As the performance requirements of electronic devices increase, it causes the wire density increases. Thus, the thickness of diffusion barrier reduces in response to an increase of wire density. However, when the thickness of diffusion barrier decreases to nanom...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/3ks82c |