Investigation on the preparing of Amorphous-alumina oxide dielectric layer by RF Sputtering for thin flim transistor
碩士 === 國立中興大學 === 光電工程研究所 === 107 === This study is the fabrication analysis and application of thin film transistors with amorphous alumina as the gate dielectric layer. First, improving the defects into amorphous alumina (α-Al2O3) is critical of the experiment. Therefore, it is hoped that the heat...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/ycb96e |