HfO2/ZnO superlattice channel for transparent thin-film transistors fabricated by atomic layer deposition
碩士 === 國立中興大學 === 光電工程研究所 === 107 === This thesis uses Atomic Layer Deposition (ALD) to deposit multiple oxide layers. By using ZnO and HfO2 superlattice thin-film transistors, we expect two-dimensional electron gas that exists in the lattice structure can increase the mobility of transistors. In ad...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/983j7f |