| Summary: | 碩士 === 國立中興大學 === 物理學系所 === 107 === This thesis mainly discusses the measurement problems encountered in the process of detecting the polymer polymer protective layer in the wafer bump packaging process. At present, in the wafer bump protective layer lithography process, the time change of the surface photoresist film after the development reaction is changed, which is a preliminary indicator of production quality management. In order to solve the problem of poor identification encountered during the visual change of artificial visual development, this paper uses different combinations of photosensitive coupling element parameters to investigate the effect of the change of each imaging parameter on the detection of the change of the negative photoresist polymer protective layer on the wafer. Finally, the best sensitization coupling component visual identification parameters are obtained, and the automatic detection method is used to achieve the correct measurement of the change time of the photoresist development reaction.
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