Resistive Switching Behaviors of Magnesium Zirconia Nickel Nanorods by Solution Process for Resistive Random Access Memory
碩士 === 國立成功大學 === 微電子工程研究所 === 107 === To effectively improve the uniformity of switching behavior in resistive switching devices, the magnesium zirconia nickel (MZN) nanorods (NRs) on ITO electrodes using the low-temperature and easy fabricated hydrothermal method will be presented. The field emiss...
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/hdyyq9 |